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DESCRIPTION
RD70HVF1is a MOS FET type transistor specificallydesigned forVHF/UHFHigh power amplifiersapplications.
FEATURES
High power and High Gain:Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHzPout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHzHigh Efficiency:60%typ.on VHF BandHigh Efficiency:55%typ.on UHF Band.
APPLICATION
For output stage of high power amplifiers inVHF/UHFBandmobile radio sets.
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