Original Mitsubishi RD70HVF1 Silicon RF Power MOS FET

Original Mitsubishi RD70HVF1 Silicon RF Power MOS FET

RD70HVF1
55,00 €

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DESCRIPTION

RD70HVF1is a MOS FET type transistor specificallydesigned forVHF/UHFHigh power amplifiersapplications.

FEATURES

High power and High Gain:Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHzPout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHzHigh Efficiency:60%typ.on VHF BandHigh Efficiency:55%typ.on UHF Band.

APPLICATION

For output stage of high power amplifiers inVHF/UHFBandmobile radio sets.

http://www.mitsubishielectric.com/semiconductors/content/product/hf/sirfpowermosfet/siliconrfdiscrete/siliconrfdiscrete_lv4/rd70hvf1.pdf

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